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Semiconductor Silicon Carbide for
Power and Energy Applications
Mark Loboda
Dow Corning
Wednesday, March 7th, 2012
Grand Traverse Pie Company, 2600 N. Saginaw
Rd, Midland
6:00pm Free sandwiches while they last
7:00pm Presentation
Global focus on electronics technology to control power
and reduce energy consumption now drives growth of product markets
leveraging semiconductor silicon carbide (SiC) substrates. Sustained growth
requires the availability of SiC epitaxial substrates with continually
improving quality and a cost reduction roadmap to support broad product
adoption by the power semiconductor industry. This presentation will
introduce the role and impact SiC power semiconductors can have on energy
conservation and quality of life. The challenges, science and methods behind
SiC crystal growth, wafer fabrication and epitaxy will be introduced in the
context of the semiconductor engineering and manufacturing. The rapid
advancement of this technology at Dow Corning will be highlighted by review
of the plurality of scientific disciplines practiced in this activity and an
engineering/statistics approach to reduce the experience curve.
Mark Loboda joined Dow Corning in 1989, and is presently
Chief Scientist in the Compound Semiconductor Solutions Business. He
received B.Sc.(1983) and M.Sc.(1985) degrees in Applied Physics at DePaul
University in Chicago, IL. Prior to joining Dow Corning, he was employed at
the Raytheon Company’s Research Division. Mr. Loboda is an internationally
recognized expert in the area of low permittivity dielectric materials
science/applications and chemical vapor deposition technology. Mr. Loboda
has published over 90 technical papers and has been awarded 18 patents
spanning the areas of RF and microwave electronics, integrated circuit and
display fabrication, and chemical vapor deposition of Si-based materials.
Mr. Loboda is a Senior Member of the IEEE.
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